Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2: Journal of Applied Physics: Vol 112, No 1
Charge separation and carrier dynamics in donor-acceptor heterojunction photovoltaic systems: Structural Dynamics: Vol 4, No 6
Förster resonance energy transfer (FRET)-based small-molecule sensors and imaging agents - Chemical Society Reviews (RSC Publishing) DOI:10.1039/C9CS00318E
Professor Robert B. Laughlin, Department of Physics, Stanford University
Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2: Journal of Applied Physics: Vol 112, No 1
Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2: Journal of Applied Physics: Vol 112, No 1
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Structural and Optical Properties of Aluminium Antimonide Thin ...
Introduction To Semiconductors (all content)
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PDF] Hexagonal boron nitride is an indirect bandgap semiconductor | Semantic Scholar
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![PDF] Donor–acceptor pair recombination in gallium sulfide | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/a671a146f93567a7d144869fec8ecadd03713e8c/3-Figure2-1.png "PDF] Donor–acceptor pair recombination in gallium sulfide | Semantic Scholar")
PDF] Donor–acceptor pair recombination in gallium sulfide | Semantic Scholar
![PDF] Hexagonal boron nitride is an indirect bandgap semiconductor | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/f25af20ac198a5e8368cd8ff08fc8c9fd4c088dc/2-Figure1-1.png "PDF] Hexagonal boron nitride is an indirect bandgap semiconductor | Semantic Scholar")
PDF] Hexagonal boron nitride is an indirect bandgap semiconductor | Semantic Scholar
Professor Robert B. Laughlin, Department of Physics, Stanford University
2019 Q.1 (a) GP has an indirect bandgap of 2.26 eV | Chegg.com
![PDF] Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2 | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/c1d39af4308bd965c98b88ecde3d5b4878828327/3-Figure1-1.png "PDF] Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2 | Semantic Scholar")
PDF] Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2 | Semantic Scholar
Q.1 (a) GaP has an indirect bandgap of 2.26 eV and | Chegg.com
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Shallow Acceptor - an overview | ScienceDirect Topics
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Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide
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